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NXP-Double low VCEsat (BISS) transistors in DFN2020-6
原廠/品牌： NXP 上架日期： 06/20
供應商： NXP 產品類別： Power

     Low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
零件編號 封裝 規格說明 單價 庫存 最小
購量		 訂購數量
PBSS4XXXPAN DFN2020-6 Collector-emitter voltage VCEO = 30 V, 60 V and 120 V; collector current IC = 1 A and 2 A    電洽 0週交貨 1 電洽

Type number Configuration Collector-emitter voltage VCEO Collector current IC
PBSS4130PAN NPN/NPN 30 V 1 A
PBSS5130PAP PNP/PNP 30 V 1 A
PBSS4130PANP NPN/PNP 30 V 1 A
PBSS4230PAN NPN/NPN 30 V 2 A
PBSS5230PAP PNP/PNP 30 V 2 A
PBSS4230PANP NPN/PNP 30 V 2 A
PBSS4160PAN NPN/NPN 60 V 1 A
PBSS5160PAP PNP/PNP 60 V 1 A
PBSS4160PANP NPN/PNP 60 V 1 A
PBSS4260PAN NPN/NPN 60 V 2 A
PBSS5260PAP PNP/PNP 60 V 2 A
PBSS4260PANP NPN/PNP 60 V 2 A
PBSS4112PAN NPN/NPN 120 V 1 A
PBSS5112PAP PNP/PNP 120 V 1 A
PBSS4112PANP NPN/PNP 120 V 1 A
功能和優勢
  • ■ Very low collector-emitter saturation voltage VCEsat
  • ■ High collector current capability IC and ICM
  • ■ High collector current gain hFE at high IC
  • ■ Reduced Printed-Circuit Board (PCB) requirements
  • ■ High efficiency due to less heat generation
  • ■ AEC-Q101 qualified
應用
  • ■ Load switch
  • ■ Battery-driven devices
  • ■ Power management
  • ■ Charging circuits
  • ■ Power switches (e.g. motors, fans)